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Resistively switching nonvolatile memory cell based on alkali metal ion drift
Resistively switching nonvolatile memory cell based on alkali metal ion drift
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机译:基于碱金属离子漂移的电阻切换非易失性存储单元
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摘要
A nonvolatile, resistively switching memory cell includes a layer arranged between a first electrode and a second electrode. The layer includes one or more chalcogenide compound(s) selected from the group consisting of CuInS, CuInSe, CdInS, CdInSe, ZnInS, MnInS, MnZnInS, ZnInSe, InS, InSSe and InSe, with alkali metal or alkaline-earth metal ions contained in the layer of the chalcogenide compound(s).
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