Resistively switching not - volatile memory cell on the basis of alkali - ion drift

摘要

The present invention relates to a not - volatile, resistive switching memory cell, which between a first and a second electrode layer of one or more chalcogenide - compound (s) selected from the group consisting of cuins, cuinse, cdins, cdinse, znins, mnins, mnznins, zninse, into the, insse and inse, wherein in the layer of the chalcogenide - compound (s) - alkali or alkaline earth metal - ions include.