Resistively switching not - volatile memory cell on the basis of alkali - ion drift, a method for the production and use of a compound for the production of

摘要

Not - volatile, resistive memory cell with a switching between a first and a second electrode layer of one or more chalcogenide - compounds selected from the group consisting of cuins, cuinse, cdins, cdinse, znins, mnins, mnznins, zninse, into the, insse and inse and their alloys, wherein the layer of alkali - or alkaline earth metal - ions.