首页> 外国专利> Semiconductor device obtained by dividing semiconductor wafer by use of laser dicing technique and method of manufacturing the same

Semiconductor device obtained by dividing semiconductor wafer by use of laser dicing technique and method of manufacturing the same

机译:通过使用激光切割技术分割半导体晶片而获得的半导体器件及其制造方法

摘要

A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.
机译:通过使用激光切割技术分割半导体晶片来形成半导体芯片。半导体芯片在其侧面上具有激光切割区域。沿着激光切割区域的表面层上的激光切割区域形成伪布线层。激光束被施加到虚设布线层以划分半导体晶片。

著录项

  • 公开/公告号US7091624B2

    专利类型

  • 公开/公告日2006-08-15

    原文格式PDF

  • 申请/专利权人 TOSHITSUNE IIJIMA;NINAO SATO;

    申请/专利号US20030418274

  • 发明设计人 TOSHITSUNE IIJIMA;NINAO SATO;

    申请日2003-04-18

  • 分类号H01L31/0216;

  • 国家 US

  • 入库时间 2022-08-21 21:43:57

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