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Process for low k dielectric plasma etching with high selectivity to deep uv photoresist
Process for low k dielectric plasma etching with high selectivity to deep uv photoresist
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机译:对深紫外光刻胶具有高选择性的低k介电等离子体蚀刻工艺
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摘要
A method of forming a microelectronic structure and its associated structures is described. That method comprises forming and patterning a deep uv resist layer on a substrate, etching the substrate in a plasma generated from a gas comprising a carbon to fluorine ratio from about 1:1 to about 2:3 to form substantially vertical sidewalls in the deep uv resist layer.
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