Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process

摘要

The invention discloses a novel flexible, modular fabrication method for integrated high aspect ratio single crystal silicon microstructures designed and manufactured in a post conventional CMOS process (Post-CMOS). The method involves the standard circuits formation, the electrical isolation trenched etching and refilling, backside etching, interconnection formation, and structure releasing. Further, a method of tailoring the trench profile for refill the trench fully without void is also disclosed.