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Multi-level gate SONOS flash memory device with high voltage oxide and method for the fabrication thereof
Multi-level gate SONOS flash memory device with high voltage oxide and method for the fabrication thereof
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机译:具有高电压氧化物的多级栅极SONOS闪存器件及其制造方法
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摘要
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a gate dielectric layer over the semiconductor substrate. The gate dielectric layer is formed in a plurality of thicknesses in a plurality of devices regions over the semiconductor substrate. A second dielectric layer is formed over at least one of the devices regions. A third dielectric layer is formed over at least a portion of the second dielectric layer. Ion traps are then selectively implanted in portions of the second dielectric layer.
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