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Bias-adjusted magnetoresistive devices for magnetic random access memory (MRAM) applications
Bias-adjusted magnetoresistive devices for magnetic random access memory (MRAM) applications
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机译:用于磁性随机存取存储器(MRAM)应用的偏置调整磁阻器件
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摘要
A method and apparatus are presented for shifting a hysteresis loop of a magnetoresistive device. For example, a method provides for applying a bias current to a word line of the magnetoresistive device during either a read sequence or a write sequence. The bias current is preferably configured to substantially center a hysteresis loop of the device without switching a binary state of the device.
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