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Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method
Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method
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机译:用于通过与存储单元类似的元件对所需信息进行编程的薄膜磁存储装置和信息编程方法
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摘要
A program unit includes two program cells having an electric resistance varying according to a magnetization direction thereof. These program cells are magnetized in the same direction in initial state, that is, non-program state. In program state, the magnetization direction of one of the program cells selected according to program data is changed from the initial state. One-bit program data and information of whether the program unit stores program data or not can be read based on two program signals generated according to the electric resistances of the two program cells.
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