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Electromigration-reliability improvement of dual damascene interconnects
Electromigration-reliability improvement of dual damascene interconnects
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机译:双镶嵌互连的电迁移可靠性提高
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摘要
Metallic reservoirs in the form of passive or dummy vias are used on interconnects as a source or sink for electromigration material, slowing the build up of electromigration-induced mechanical stress. The passive or dummy vias are disposed in a vertical direction from the interconnect (perpendicular to the plane of the interconnect) to so that the reservoirs do not occupy additional space in the interconnect layer. Both apparatus and method embodiments are described.
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