关于多孔MSQ Dual Damascene蚀刻/灰化工艺--为更低损伤和更低k值的多方面损伤评价和化学性质优化

摘要

对铜(Cu)互连系统使用低k值材料时,应解决的许多相关问题不仅有技术问题,而且有所有权成本(CoO)/质量合格(CoC)问题.从蚀刻和灰化(去除)工艺的角度报道了几种问题的解决方法.对蚀刻工艺,将在此推荐Via 1st的Duo248TM方法(Duo248TM是Honeywell公司的材料,包含US专利#6,268,457).对于灰化工艺,建议混合灰化工艺(Hybrid Ashing),即蚀刻和灰化工艺在同一反应室连续进行.这些方法的目标将是65 nm以下工艺.%When applying Low-k material to Cu interconnect systems, many issues related not only to technology but also CoO/CoC, should be resolved. In this paper,we are reporting solutions for several issues from the etching and ashing process point of view. For Etching, Duo248TM approach ( Duo 248TM from Honeywell is covered under US patent # 6,268,457) that is sacrificial material for Via 1' approach applied from Honeywell is proposed. For ashing, Hybrid Ashing that is all in one approach (Etching and Ashing process same chamber continuously) is proposed.The target of those approaches will be below 65 nm.