首页>
外国专利>
Method of integrating high voltage metal oxide semiconductor devices and submicron metal oxide semiconductor devices
Method of integrating high voltage metal oxide semiconductor devices and submicron metal oxide semiconductor devices
展开▼
机译:集成高压金属氧化物半导体器件和亚微米金属氧化物半导体器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a method of integrating at least one high voltage metal oxide semiconductor device and at least one Submicron metal oxide semiconductor device on a substrate. The method comprises: providing the substrate, forming a plurality of shallow trenches having different depths on a surface of the substrate, and forming a plurality of silicon oxide layers filling up the shallow trenches, and a top of each of the silicon oxide layers being in the shape of a mushroom.
展开▼