INDIRECT-BANDGAP SEMICONDUCTOR LASER AND METHOD TO FABRICATE SAME

摘要

A solid state optical emitter has an active region having a layer of an indirect-bandgap semiconductor material. The layer is patterned to have nano-scale features and emits an optical signal characterized by an amplified spontaneous emission (ASE) spectrum, and is further characterized by having an emission peak within the ASE spectrum that has a plurality of characteristics that are consistent with a laser emission. In one embodiment the ASE spectrum is characterized by wavelengths in the range of about 1240nm to about 1290nm, and the emission peak is centered at about 1280nm.