ETCHANT FOR WET ETCHING AlXGaI-XAs EPITAXIAL LAYER AND METHOD FOR MANUFACTURING SEMI¬ CONDUCTOR DEVICE USING THE ETCHANT

摘要

Provided are an etchant for etching an Alx Ga1-x As epitaxial layer and a method of fabricating semiconductor devices using the same. The etchant includes a mixture of H3 PO4 , H2O2, and CH3OH. Using the etchant, an Alx Ga1-x As (O x 1) epitaxial layer is etched, thereby providing isotropic etching characteristics and forming a mesa with vertical sidewalls. Since the etch selectivity of the GaAs layer and the AlGaAs layer is close to 1, the sidewalls of the mesa are smooth.