SEMICONDUCTOR DEVICE EXAMINING METHOD, ITS EXAMINING DEVICE, AND SEMICONDUCTOR DEVICE SUITED TO THE EXAMINATION

摘要

A method for examining the results after the manufacturing process of an LSI (Large scale integration) device, particularly, an examining method used for quickly and accurately examining the cross section fine structure of an LSI device produced after the manufacturing process. Its examining device and a semiconductor device suited to the examination are also disclosed. The examining method is characterized by comprising a sample making step of thinning a semiconductor chip in such a way that the substrate crystal and a portion added in the manufacturing process are included, a step of applying an electron beam to the semiconductor chip, a step of detecting an electron beam passing through the semiconductor chip to create an electron beam diffraction image, a step of removing the electron beam diffracted by the substrate crystal, and a step of comparing the lattice fringes obtained from the substrate crystal with the thickness of the portion added in the manufacturing process.