Examination of semiconductors for bipolar power devices

摘要

The performance of Ge, Si, 3C-SiC, 6H-SiC and Diamond bipolar power devices is evaluated theoretically. P-i-N diodes, GTOs, IGBTs and power BJTs are separately analyzed to assess the interplay of device physics and material parameters on the static and switching performance. First order models fail to yield meaningful results. It is concluded that low forward drops may only be achieved if the device has an even number of junctions. Gains in switching performance accrue from the use of wide bandgap materials.