CONTROL OF PHOTOELECTROCHEMICAL (PEC) ETCHING BY MODIFICATION OF THE LOCAL ELECTROCHEMICAL POTENTIAL OF THE SEMICONDUCTOR STRUCTURE RELATIVE TO THE ELECTROLYTE

摘要

A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.