Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby

摘要

Method for producing a semiconductor device comprising:providing a device with a monocrystalline semiconductor layer on an insulating layer, characterized byproviding a mask on said semiconductor layer to provide first shielded portions and first unshielded portions;amorphizing said first unshielded portions to yield first amorphized portions of said monocrystalline semiconductor layer;implanting a first dopant in said first amorphized portions;applying a first solid phase epitaxial regrowth action to said semiconductor device while using said first shielded portions as monocrystalline seeds.