PROCESS FOR PRODUCING SILICON SINGLE-CRYSTAL, ANNEALED WAFER AND PROCESS FOR PRODUCING ANNEALED WAFER

摘要

A method of stabilizing the quality of annealed wafer through surely reducing of SSD while ensuring formation of BMD as a gettering source in bulk and decrease of void defects other than SSD on wafer surface that are absolutely essential for annealed wafer. Assuming that annealing of silicon wafer would lead to an increase of density (quantity) of precipitates associated with nitrogen and oxygen becoming SSD nuclei, SSD is reduced through reducing of the density (quantity) of precipitates associated with nitrogen and oxygen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling-up growth of silicon single-crystal (6) before annealing. Alternatively, SSD is reduced by polishing after annealing.