2-BIT SONOS TYPE MEMORY CELL COMPRISING RECESSED CHANNEL AND MANUFACTURING METHOD FOR THE SAME

摘要

It discloses a 2-bit SONOS type memory cell and its manufacturing method having a recessed channel. The 2-bit SONOS type memory cell in accordance with one embodiment of the invention is spaced apart by the trench is formed in a semiconductor substrate, a trench with a predetermined interval in which the first depth so as to have a second depth smaller than the first depth of the trench amounts is formed on the semiconductor substrate, the source / drain regions in the side, of the pair is formed on the semiconductor substrate between the gate oxide film, a trench is formed on the inner wall of the trench with the source / drain regions a first dielectric pattern, the first dielectric the charge trapping of the pair is formed on the pattern pattern, a charge trapping pattern image is formed in the pair of second dielectric pattern and the first dielectric pattern of the trench interior and a pair on the gate oxide film, a charge trapping pattern and the second dielectric It comprises a space and a gate formed on the second dielectric pattern between the patterns.