2-bit SONOS type memory cell comprising recessed channel and manufacturing method for the same

摘要

The recessed channel having a 2-bit SONOS memory cell and initiates its manufacturing method . 2-bit SONOS type memory cell is a semiconductor substrate is formed with a trench having a first depth, trench and the trench is spaced a predetermined distance so as to have a second depth smaller than the first depth amount according to an embodiment of the present invention source / drain regions formed in the semiconductor substrate next to the gate, which is formed on the inner wall of the trench oxide film, a trench with the source / drain of the pair is formed on a semiconductor substrate region between the first dielectric pattern, the first dielectric Pattern 1 is formed on the pair of the charge trapping pattern, a charge trapping pattern the second of the pair, which is formed on the dielectric pattern and the gate trench and a pair of the first pattern on the dielectric oxide film, a charge trapping pattern and the second dielectric the space between the pattern and the second comprises a gate formed on the dielectric pattern.