METHOD OF FABRICATING A FLASH MEMORY DEVICE HAVING LOCAL SONOS TYPE GATE

摘要

Small portion provides a method for producing a flash memory device having a north gate. The methods include defining an active region by forming a trench device isolation film on a predetermined region of the semiconductor substrate. Said active region to form a memory storage layers on a semiconductor substrate limited. By etching the memory storage layer to form the gate openings across the partial region on the active region. To form a silicon oxynitride film on the active region exposed by opening the gate. The silicon oxynitride film and a gate dielectric layer on the semiconductor substrate having the memory storage layer. The gate dielectric layer is formed to cover the silicon nitride oxide, and the memory-storage layer. By filling the gate opening on the semiconductor substrate and the gate dielectric layer is formed to form a polysilicon film covering the semiconductor substrate. To form the polysilicon film and a gate electrode insulated at the same time as forming the at least one memory storage pattern by sequentially patterning the memory storage layer adjacent the gate to fill the opening to cover the at least one of said memory storage pattern.