PHOTO-SENSITIVE DISSOLUTION INHIBITOR IMPROVING POST EXPOSURE BAKE SENSITIVITY OF LINE-WIDTH OF PHOTORESIST PATTERN AND CHEMICALLY-AMPLIFIED PHOTORESIST COMPOSITION INCLUDING THE SAME

摘要

Under the exposure of the short wavelength source also in transparency and dry etching resistance and sikimyeo adhesion is excellent, and a difference in solubility before and after exposure cursor improving the contrast of a photoresist composition, also improve the line edge roughness, as well as post-exposure heating step the photoresist photosensitive dissolution inhibitor that improves the sensitivity of the pattern line width and a chemically amplified photoresist composition comprising the same are disclosed. The photosensitive dissolution inhibitor is represented by formula (I) or (II).; Formula 1; [Formula 2]