首页> 外国专利> Small-sized on-chip CMOS power amplifier having improved efficiency

Small-sized on-chip CMOS power amplifier having improved efficiency

机译:效率更高的小型片上CMOS功率放大器

摘要

A small-sized on-chip complemeritary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.
机译:本文提供了一种具有改善的效率的小型片上互补金属氧化物半导体(CMOS)功率放大器。片上CMOS功率放大器能够通过提高K因子来提高效率并使输出最大化,这可能在具有分布式有源变压器结构的功率放大器中引起问题。片上CMOS功率放大器具有改进的效率并且被制造为小尺寸,该片上CMOS功率放大器包括位于第一层的初级绕组,位于第二层的次级绕组,该次级绕组是第二层的上部。在第一层中,次级绕组的位置与初级绕组的位置相对应,并且横截面用于将第二绕组彼此耦合。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号