Crystal defect monitoring method after epitaxial deposition in semiconductor manufacturing

摘要

PURPOSE: A method is provided to monitor post-epitaxial deposition crystal defect by obtaining electric data using a fixed probe and a movable probe. CONSTITUTION: A bare wafer is manufactured by using a single crystal growth. An epitaxial layer is deposited on the bare wafer. POCL3 is implanted into the resultant structure. A cleaning process is performed on the resultant structure. An OBIRCH(Optical Beam Induced Resistance Change) test is performed for crystal defect of the wafer by using a fixed probe and a movable probe. The fixed probe is used as a power terminal. The movable probe is used as a ground terminal.