FLASH MEMORY HAVING CIRCUIT FOR AVOIDING BAD BLOCK AND METHOD OF ADDRESS-SHIFTING THEREFOR

摘要

A flash memory having a bad block avoidance circuit and an address shifting method therefor are disclosed. The flash memory controller for controlling the operation of the memory; A Y-buffer latch and decoder for latching and decoding address signals under control of the controller to control bit lines of a memory cell array; An X-buffer latch for latching an address signal for controlling a word line of the memory cell array under control of the controller; A block redundancy fuse unit which stores bad block information of the memory cell array, receives block address information from the X-buffer latch, combines with bad block information, and shifts the block address; And receiving data from an I / O buffer and a latch to a page-buffer to write data to a memory cell selected by the Y-buffer latch and decoder and the block redundancy fuse according to an output signal of the controller. Or a Y-gating circuit for outputting data of the page-buffer sensed from the selected memory cell to the I / O buffer and the latch.