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METHOD OF REMOVING IMPURITIES FROM METALLURGICAL GRADE SILICON TO PRODUCE SOLAR GRADE SILICON

机译:从冶金级硅中去除杂质以生产太阳能级硅的方法

摘要

Metallurgical grade silicon is purified by removing metallic impurities and non-metallic impurities. The object is to produce a silicon species that is suitable for use as solar grade silicon. The process involves grinding metallurgical grade silicon containing metallic and non-metallic impurities to a silicon powder consisting of particles of silicon having a diameter of less than about 5 millimeter. While maintaining the ground silicon powder in the solid state, the ground silicon powder is heated to a temperature less than the melting point of silicon (1410 °C) under reduced pressure. The heated ground silicon powder is maintained at that temperature for a period of time sufficient to enable at least one metallic or non-metallic impurity to be removed from the metallurgical grade silicon.
机译:通过去除金属杂质和非金属杂质来纯化冶金级硅。目的是生产适合用作太阳能级硅的硅物质。该方法涉及将包含金属和非金属杂质的冶金级硅研磨成硅粉,该硅粉由直径小于约5毫米的硅颗粒组成。在将磨碎的硅粉保持在固态的同时,将磨碎的硅粉在减压下加热到低于硅的熔点(1410°C)的温度。将加热的磨碎的硅粉在该温度下保持足够长的时间,以使至少一种金属或非金属杂质能够从冶金级硅中去除。

著录项

  • 公开/公告号EP1687240A1

    专利类型

  • 公开/公告日2006-08-09

    原文格式PDF

  • 申请/专利权人 DOW CORNING CORPORATION;

    申请/专利号EP20040782344

  • 发明设计人 YILMAZ SEFA;RABE JAMES;BURNS GARY;

    申请日2004-08-27

  • 分类号C01B33/037;

  • 国家 EP

  • 入库时间 2022-08-21 21:27:16

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