PHASE CHANGE MEMORY DEVICE HAVING CHARACTERISTIC OF PEAK CURRENT DECREASE AND DATA WRITING METHOD THEREFOR

摘要

Phase change memory device and have a phase change memory cell be that data writing method is correspondingly activated. It is connected to phase change memory device of the invention, multiple bit lines and multiple wordline in each crosspoint of multiple wordline, and multiple bit lines and multiple phase change memory cells, bit lines are connected to each other a reset pulse with a different active period and multiple drivers, to each light supply of corresponding bit line. Phase change memory device according to the present invention, current peak in write operation reduces or the minimal variation in supply voltage is significantly prevented. Therefore, the probability of failure reduction and simultaneously as the advantage that the bit number available light write operation performance for increasing a phase change memory device is improved of write operation.