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PROCESS FOR PREPARING HAFNIUM OXIDE THIN FILMS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

机译：金属有机化学气相沉积制备氧化HA薄膜的方法

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摘要

The present invention is tetrakis (3-methyl-3-pentoxy) hafnium represented by formula (1) below ( IV) [tetrakis (3-methyl-3-pentoxy) hafnium (IV), Hf (mp) ₄] precursor by using a single metal organic chemical vapor deposition (metal organic chemical vapor deposition, MOCVD ) relates to a process for preparing a hafnium oxide thin film, the precursor of the present invention are conventional Hf (O ^t Bu) ₄ (hafnium tetra- tert -butoxide) suitable for MOCVD process, the vapor pressure increases when more stability is excellent and comparable to glass storage and use, and to prepare a hafnium oxide thin film quality and use it alone, without separately supplying oxygen source It is useful for

机译：本发明是由下式（1）表示的四（3-甲基-3-戊氧基）ha（IV）[四（3-甲基-3-戊氧基）ha（IV），Hf（mp）_{4 < ]]>前体通过使用单金属有机化学气相沉积法（金属有机化学气相沉积法，MOCVD）涉及一种制备氧化oxide薄膜的方法，本发明的前体为常规H（O ^{t Bu）_{4 （四-叔叔-丁醇）），适用于MOCVD工艺，当更高的稳定性和与玻璃的储存和使用相当时，蒸气压会增加，并且无需单独提供氧气源就可以制备氧化ha薄膜质量并单独使用。}}} 展开▼

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公开/公告号KR20060014550A

专利类型

公开/公告日2006-02-16

原文格式PDF

申请/专利权人 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY;
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申请/专利号KR20040063129

发明设计人 KIM YUN SOO;KIM CHANG GYOUN;CHUNG TAEK MO;AN KI SEOK;YANG TAEK SEUNG;JANG HONG SUK;
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申请日2004-08-11

分类号H01L21/316;

国家 KR

入库时间 2022-08-21 21:26:34

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