首页> 外国专利> PROCESS FOR PREPARING NICKEL OXIDE THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION USING NICKELII AMINOALKOXIDE

PROCESS FOR PREPARING NICKEL OXIDE THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION USING NICKELII AMINOALKOXIDE

机译:镍-氨基烷氧基化物通过金属有机化学气相沉积制备氧化镍薄膜的方法

摘要

The present invention relates to metal organic chemical with a nickel amino alkoxide precursor compound of formula (I) as a raw material for nickel deposition (metal organic chemical vapor deposition, MOCVD) relates to a process for preparing a nickel oxide thin film , according to the method of the present invention can obtain a high-quality thin film of nickel oxide in the milder process conditions than conventional metal organic chemical vapor deposition there . ; [ formula 1] ; wherein , m is an integer ranging from 1 to 3 and , R 1 , R 2 , R 3 and R 4 are independently C 1 -C 4 is a linear or branched alkyl group .
机译:技术领域本发明涉及具有化学式(I)的氨基氨基醇镍前体化合物作为镍沉积的原料的金属有机化学物质(金属有机化学气相沉积,MOCVD)涉及一种制备氧化镍薄膜的方法,与常规的金属有机化学气相沉积相比,本发明的方法可以在较温和的工艺条件下获得高质量的氧化镍薄膜。 ; [ 公式1] ;其中,m为1到3的整数,R 1 ,R 2 ,R 3 和R 4 独立为C 1 -C 4 是直链或支链烷基。

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