PROCESS FOR THE GROWTH IN SIC NANOWIRES DIRECTLY FROM NIO/SI

摘要

The present invention was applied to a nickel catalyst dissolved in alcohol Light Night Light Hex Hyde on a silicon substrate Then, the mixture of the catalyst and the silicon substrate is coated with tungsten oxide powder and carbon powder at the same time put on sapphire boat while injecting the inert gas in the heating and cooling to room temperature to a high density of highly pure carbon coated silicon carbide nanowires produced by , work to do this is a first step of applying a catalyst solution in a silicon substrate, and a second step that holds the mixture in an oven with a tungsten oxide powder and carbon powder coated with a silicon substrate, and the third for injecting argon gas in the oven process, and the oven to perform the heating step for a period of time to a predetermined temperature and a fourth step of forming a nanowire aiming on a silicon substrate. Therefore, an additional device or only operation through simple heating without the need for high purity, can be produced a high-density carbon-coated silicon carbide nanowires, thus producing carbon-coated silicon carbide nanowires, the field of display devices as a field emission material There are available on the effect.