COMPOSITION FOR PHOTORESIST PROTECTIVE FILM, PHOTORESIST PROTECTIVE FILM AND PHOTORESIST PATTERN FORMATION PROCESS

摘要

(Tasks) immersion lithography photoresist protective film that can be applied to the process, the photoresist composition for the protective film which can form a protective film, the picture provided in the method of forming the photoresist pattern using a resist-protecting film. ; (Solving means), -COOH, -SO ₃ H, -OP (= O) (OH) _2, -NR _2, and ^_-N + R 3 Cl - [R are selected from the group consisting of an alkyl group having 1 to 4 carbon atoms) It has more than one functional group, the weight average molecular weight (Mw) of all men 1000-10 fluorine-containing polymer and a solvent (water, alcohol or a fluorine-containing solvent), the photoresist composition for the protective layer containing. ; The photoresist protective film