POST ANNEALING METHOD OF GAN DEVICES BY EMPLOYING EXCIMER LASER PULSES

摘要

The present invention after the annealing treatment (post annealing) relates to the technology , the drain current increase of the GaN devices , trans- conductance (transconductance) increases , leakage currents and reduced breakdown voltage (breakdown voltage) to increase the production of GaN devices are devices behind the excimer laser pulse (excimer laser pulse) to be applied . After processing an excimer laser annealing method using a different pulse to the invention is easy to process , and improved electrical characteristics can be improved without deterioration of the element of the GaN Schottky gate (Schottky gate).