POST ANNEALING METHOD OF GAN DEVICES BY EMPLOYING EXCIMER LASER PULSES

摘要

The present invention after the annealing treatment (post annealing) relates to the technology , the drain current increase of the GaN devices , trans- conductance (transconductance) increases , and applying a reduced leakage current and breakdown voltage (breakdown voltage) excimer laser pulses to the rear element GaN device is made to increase (excimer laser pulse). After the annealing treatment method using the excimer laser pulses in accordance with the present invention is easy to process and can improve the electrical characteristics of the GaN devices without degradation of the Schottky gate (Schottky gate).