PROCESS FOR PREPARING ORGANIC THIN FILM TRANSISTOR WITH SHORT CHANNEL LENGTH USING AFM LITHOGRAPHY

摘要

The present invention relates to a method of manufacturing an organic thin film transistor , specifically : a) the deposition on the substrate depositing a metal pattern on the gate insulating film; b) forming a micro- channel between the metal pattern AFM (atomic force microscopy) the source electrode and the drain electrode by lithography ; c) depositing an organic active layer between the micro- channel formed between the source electrode and the drain electrode ; Characterized in that it comprises a . The method of manufacturing an organic thin film transistor according to the invention has the advantage that can be simple and manufactured at a low cost exactly the flexible organic display elements can be formed, the channel length .