Method for Manufacturing Ferroelectric Memory Device using 2-step Rapid Thermal Annealing

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device using two steps of rapid thermal annealing(RTP) is provided to prevent a defective contact between a storage electrode and a contact plug material in a capacitor-on-bitline(COB) structure by firstly intensifying oxide-resistant of a barrier metal, and to form an oxide electrode of a uniform thin film without a variation of roughness of a surface by secondly performing an RTP process. CONSTITUTION: An insulating layer with a contact hole exposing an impurity layer is formed on a semiconductor substrate(100). A conductive material is buried in the contact hole to form a conductive plug. A storage electrode pattern(112) including a conductive oxide material, a ferroelectric layer(114) and a plate electrode pattern(116) including a conductive oxide material are sequentially formed on the resultant structure. The conductive oxide material of the storage electrode pattern is formed by two steps of rapid thermal processing(RTP) which are performed in a different gas atmosphere after a barrier metal layer functioning as a barrier regarding the conductive plug is deposited.