GROWTH METHOD OF ??? NANOROD AND NANOWIRE USING SINGLE PRECURSOR AND CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: Provided is a method for growing silicon carbide nanorod and nanowire for use as field emission display and electronic device by directly growing nanorod and nanowire on substrates at low temperature by using a single precursor and thermal chemical vapor deposition. CONSTITUTION: Carbon nanorod and nanowire are grown by the following steps of: forming a catalyst layer on a substrate by spray-coating 10-50mol% of suspension solution, composed of at least one of Ni, Fe, Co, Cr, La, Ti, Mo and Au, on the substrate made of silicon, glass or graphite; thermal treating the catalyst layer rapidly to agglomerate catalysts; thermal vapor depositing Si and C-contained single precursor flown into a reaction tube with H2 or Ar carrier gas, wherein the single precursor is at least one of hexamethyldisilane, 1,3-disilabutane, tetramethylsilane, tripropylsilane and methyltrichlorosilane.