Self-aligned ridge waveguide semiconductor laser diode structure

摘要

The present invention relates to a ridge structure of a self-aligned structure semiconductor laser diode using the oxidation technique. ; According to the present invention, the lower cladding layer on a semiconductor substrate, the lower waveguide layer, an active layer, an upper waveguide layer, upper cladding layer and capable of oxidizing the oxidation takes place by sequentially depositing the ohmic contact layer difficult ridge semiconductor laser diode forming a base structure and; After depositing a silicon oxide layer or a silicon nitride layer over the structure, an etch mask in this by the ridge structure to form an ohmic contact layer and the upper cladding layer on the etching mask pattern to a predetermined thickness by etching the bottom of the upper cladding layer and the ohmic contact layer and forming; And the step of converting a surface portion of an oxide of electricity than through the upper cladding layer exposed to the oxidation step proceeding in the results; After removal of the etch mask layer of silicon oxide or silicon nitride layer and depositing a p- metal layer on the entire surface; The results after the wrapping process presents a method for producing a self-aligned ridge waveguide semiconductor laser diode comprising a metal layer deposition and heat n- ruling process step. ; Properties of the ridge waveguide semiconductor laser diode according to the present invention a dramatically improved, and can improve the yield and uniformity of the laser diode fabrication process to produce a high-performance low-cost optical module.