METHOD FOR MANUFACTURING SELF-ALIGNED RIDGE WAVEGUIDE SEMICONDUCTOR LASER DIODE AND OPTICAL MODE CONVERTER USING PROTECTION LAYER

摘要

A method for manufacturing a self-aligned ridge waveguide semiconductor laser diode and an optical mode converter using a protection layer is provided to form a protection layer by coating material based polymer without performing additionally photolithography process to easily implement a p-side ohmic contact. A method for manufacturing a self-aligned ridge waveguide semiconductor laser diode and an optical mode converter using a protection layer includes a step of forming a basic structure of a semiconductor laser diode by sequentially depositing a bottom clad layer(110), an active layer(120), an top clad layer(130), and an ohmic contact layer(140) on a semiconductor substrate(100). A ridge waveguide is formed by sequentially etching the ohmic contact layer and the top clad layer with a mask pattern for the active layer to be exposed. A protection layer(150) is formed on a top surface of the ridge waveguide. The ohmic contact layer is exposed by using a dry etching manner.