HIGH BRIGHTNESS GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE WITH TRANSPARENT CONDUCTING OXIDE SPREADING LAYER

摘要

A new transparent conducting oxide (TCO), which can be expressed as AlSUBx/SUBGaSUB3-x-y/SUBInSUB5+y/SUBSnSUB2-z/SUBOSUB16-2z/SUB; 0=x1, 0y3, 0=z2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new AlSUB2/SUBOSUB3/SUB-GaSUB2/SUBOSUB3/SUB-InSUB2/SUBOSUB3/SUB-SnOSUB2 /SUBsystem is able to increase the brightness at 1.5~2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.