首页> 外国专利> Photoresist copolymer for preventing acid diffusion, and photoresist composition comprising the same

Photoresist copolymer for preventing acid diffusion, and photoresist composition comprising the same

机译:用于防止酸扩散的光致抗蚀剂共聚物和包含该光致抗蚀剂组合物的光致抗蚀剂组合物

摘要

The invention photolithography step of the acid diffusion controller to prevent the acid generated in the exposed portion by the exposure process to be diffused to unexposed portion for preventing the photoresist copolymer and photo relates to a resist composition, at least one or more copolymerizable carbon-containing them - a compound having a carbon-carbon double bond, to be formed an ultra-fine pattern by adding a photoresist copolymer comprising a repeating unit represented by formula (1) in the photoresist composition, the line edge roughness (line edge roughness: LER) and slow can improve the profile (Slope), improving the appearance of a pattern by removing the top LOS (loss Top), and the addition can improve the adhesion of the photo resist pattern (adhesion) to the substrate. ; Formula 1 ; Wherein ; n is an integer selected from 1 to 5.
机译:酸扩散控制剂的本发明光刻步骤,其防止通过曝光工艺在曝光部分中产生的酸扩散到未曝光部分,以防止光致抗蚀剂共聚物和光,涉及一种抗蚀剂组合物,至少一种或多种可共聚含碳通过在光致抗蚀剂组合物中添加包含由式(1)表示的重复单元的光致抗蚀剂共聚物来形成具有碳-碳双键的化合物的超细图案,线边缘粗糙度(线边缘粗糙度:LER)慢)可以改善轮廓(斜率),通过去除顶部LOS(损耗顶部)来改善图案的外观,并且添加可以改善光致抗蚀剂图案对基材的附着力(附着力)。 ; <公式1>;其中; n是从1到5中选择的整数。

著录项

  • 公开/公告号KR100604751B1

    专利类型

  • 公开/公告日2006-07-26

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010051442

  • 申请日2001-08-24

  • 分类号G03F7/027;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:20

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