STENCIL MASK FOR ELECTRON BEAM PROJECTION LITHOGRAPHY AND METHOD FOR FABRICATING THE SAME

摘要

The present invention provides a cell due to the projection beam during the exposure process, the proximity effect using a stencil mask as a photomask The critical dimension of the pattern in the edge of the block may initiate a stencil mask and a manufacturing method capable of preventing the phenomenon to be small, the stencil mask of the disclosed invention includes a frame for supporting the whole; The membrane is arranged on the frame as a whole to achieve the balance of stress due to the electron beam; And is disposed on the membrane consists of a scattering layer for scattering electron beams at an angle, the scattering layer is characterized in that a portion corresponding to the edge of cell block having a relatively thin thickness than a portion corresponding to the center, The method includes the steps of providing a membrane layer and the scattering material film laminate having a frame and the opening area; Forming a photoresist pattern covering the center of the portion corresponding to the block cells on the scattering layer material film; Etching the scattering film layer material so as to have a partially different thickness, the predetermined thickness of the exposed film material of the scattering layer by using the photoresist pattern; Removing said photoresist pattern; And the scattering layer material to the patterned film, the portion corresponding to the edge of cell block comprises the step of forming the scattering layer having a relatively thin thickness than the portion corresponding to the center.