Articles having a protective coating and cathodic TARGET FOR PERFORMANCE coated products

摘要

1.the product containing the substrate, the coating applied at least to a part of the substrate, a protective coating applied on at least a part u0440u0430u0431u043eu0447u0435u0433 on the u043fu043eu043au0440u044bu0442u0438u00a0, with a cover and a protective coating covering the package, the package provides the u0438u0437u043b supplies the protective coating u0443u0447u0435u043du0438u00a0 exceeding the u0438u0437u043bu0443u0447u0435u043du0438u00a0 one working u043fu043eu043au0440u044bu0442u0438u00a0,the protective coating has a thickness in the range of more than 100 e to less than 10 mk, and the protective coating has a coefficient of u043eu0442u0440u0430u0436u0435u043du0438u00a0 ranging from 1.4 to 2, and the u0449u0438u0442u043du043eu0435 coating includes a first layer formed at least on the part of the working u043fu043eu043au0440u044bu0442u0438u00a0, and a second layer formed at least on a part of the first wow u0441u043bu043eu00a0, the first layer contains from 50 to 100 mas.per cent of u0430u043bu044eu043cu0438u043du0438u00a0 and 50 to 0 mas.% of u043au0440u0435u043cu043du0438u00a0, and the second layer contains from 50 to 100 mas.% of u043au0440u0435u043cu043du0438u00a0 and 50 to 0 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0.;2. the product for 1, in which the product u00a0u0432u043bu00a0u0435u0442u0441u00a0 transparent element of the vehicle with the engine.;3. the product for 1, in which the first layer contains between 70 and 100 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0 and from 30 to 10 mas.% of u043au0440u0435u043cu043du0438u00a0.;4. the product for 1, in which the first layer has a thickness in the range from 50's to 1 mc.;5. the product for 1, in which the first layer has a thickness in the range of from 100 to 250 e e.;6. the product for 1, in which the second layer contains between 70 and 100 mas.% of u043au0440u0435u043cu043du0438u00a0 and from 30 to 10 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0.;7. the product for 1, in which the second layer has a thickness in the range from 50 to 2000.;8. the product for 1, in which the second layer has a thickness in the range from 300 to 500.;9.monolithic transparent element containing u0441u0442u0435u043au043bu00a0u043du043du0443u044e substrate, a coating applied to at least a part u0441u0442u0435u043au043bu00a0u043du043du043eu0439 substrate, protective coating, n u0430u043du0435u0441u0435u043du043du043eu0435, at least, on the part of the working u043fu043eu043au0440u044bu0442u0438u00a0 education covering package with protective coating containing oxide u0430u043bu044eu043cu0438u043du0438u00a0, has thickness in the range of from 1 to 10 mk,the protective coating includes a first layer formed at least on the part of the working u043fu043eu043au0440u044bu0442u0438u00a0, and a second layer formed at least on the as part of the first u0441u043bu043eu00a0, the first layer contains from 50 to 100 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0 and 50 to 0 mas.% of u043au0440u0435u043cu043du0438u00a0, and the second layer contains from 50 to 100% of the mas. u0440u0435u043cu043du0438u00a0 and 50 to 0 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0.;10.a product comprising a substrate, at least one reflecting the infrared part of the solar energy, a dielectric coating applied at least over part of the substrate, a protective coating applied on at least a part of u043fu043eu043au0440u044bu0442u0438u00a0, the protective coating has a thickness in the range of more than 100 e to less than 10 mk and has u043fu0440u0435u043bu043eu043cu043bu0435u043du0438u00a0 rate ranging from 1.4 to 1.8 and the protective coating includes a first layer formed at least on the part of the working u043fu043eu043au0440u044bu0442u0438u00a0, and a second layer formed at me d, on the part of the first u0441u043bu043eu00a0, the first layer contains from 50 to 100 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0 and 50 to 0 mas.% of u043au0440u0435u043cu043du0438u00a0, and the second layer contains from 50 to 100% u0434u0438u043eu043a mas. sid u043au0440u0435u043cu043du0438u00a0 and 50 to 0 mas.% oxide u0430u043bu044eu043cu0438u043du0438u00a0.;11. the system from a source of alternating current and u044du043bu0435u043au0442u0440u043eu043fu0438u0442u0430u043du0438u00a0 cathode target, u0441u043eu0434u0435u0440u0436u0430u0449u0430u00a0 u043au0430u0442u043eu0434u043du0443u044e target containing aluminum in the range of from 5 to 100% and silicon in dia mas. u043fu0430u0437u043eu043du0435 from 0 to 95 mas.%.;12. system for the p.11, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 20 to 80 mas.%, and the u043au0440u0435u043cu043du0438u00a0 ranging from 20 to 80 mas.%.;13. system for the p.11, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 20 to 70 mas.%, and the u043au0440u0435u043cu043du0438u00a0 ranging from 30 to 80 mas.%.;14. system for the p.11, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 50 to 80 mas.%, and the u043au0440u0435u043cu043du0438u00a0 ranging from 20 to 50 mas.%.;15. system for the p.11, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 60 to 70 mas.%, and the u043au0440u0435u043cu043du0438u00a0 ranging from 30 to 40 mas.%.;16. system for the p.11, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 35 to 100 mas.%, and the u043au0440u0435u043cu043du0438u00a0 ranged from 0 to 65 mas.%.;17. system for the p.11, in which aluminum and silicon selected from mixtures or alloys thereof.;18. system for the p.11, in which a target further contains at least one u043fu0440u0438u0441u0430u0434u043au0443 selected from chromium, u0433u0430u0444u043du0438u00a0, u0438u0442u0442u0440u0438u00a0, u043du0438u043au0435u043bu00a0, boron, phosphorus, titanium, u0446u0438u0440u043au043eu043du0438u00a0, t u0430u043du0442u0430u043bu0430, u043du0438u043eu0431u0438u00a0 and their mixtures or combinations.;19. system in which the cathode u00a0u0432u043bu00a0u0435u0442u0441u00a0 p.11, cylindrical u043cu0430u0433u043du0435u0442u0440u043eu043du043du043eu0439 target.;20. system for the p.11, which u00a0u0432u043bu00a0u0435u0442u0441u00a0 cylindrical cathode target of magnetron type.;21. system for the p.11, which u00a0u0432u043bu00a0u0435u0442u0441u00a0 flat cathode with the cathode.;22. system in which the cathode u00a0u0432u043bu00a0u0435u0442u0441u00a0 p.11, a cathode with a flat.;23. the system further u0441u043eu0434u0435u0440u0436u0430u0449u0430u00a0 p.11, plasma u0438u0437u043bu0443u0447u0435u043du0438u00a0 optical monitoring system.;24. system u044du043bu0435u043au0442u0440u043eu043fu0438u0442u0430u043du0438u00a0 p.11, in which the source of alternating current includes a circuit for automatic u0443u043fu0440u0430u0432u043bu0435u043du0438u00a0 reverse u0441u0432u00a0u0437u044cu044e on u043du0430u043fu0440u00a0u0436u0435u043du0438u044e.;25. system for the p.11, in which the cathode is u0434u043bu00a0 u0438u0441u043fu043eu043bu044cu0437u043eu0432u0430u043du0438u00a0 with capacity in the range of from 50 to 500 kw.;26. system for the p.11, in which the cathode is u0434u043bu00a0 u0438u0441u043fu043eu043bu044cu0437u043eu0432u0430u043du0438u00a0 at a frequency in the range from 10 to 100 khz.;27. system for the p.11, in which the cathode is u0434u043bu00a0 u0438u0441u043fu043eu043bu044cu0437u043eu0432u0430u043du0438u00a0 at a frequency in the range of from 30 to 70 khz.;28. the system further u0441u043eu0434u0435u0440u0436u0430u0449u0430u00a0 p.11, at least one gas selected from argon, oxygen, nitrogen, u043du0438u0442u0440u043eu043au0441u0438u0434u0430 and their mixtures or combinations.;29. the system further u0441u043eu0434u0435u0440u0436u0430u0449u0430u00a0 p.11, argon gas and at least one other gas selected from oxygen, nitrogen, neon, u0433u0435u043bu0438u00a0, u043du0438u0442u0440u043eu043au0441u0438u0434u0430, ozone and their mixtures or combinations.;30. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0, u0441u043eu0434u0435u0440u0436u0430u0449u0430u00a0 aluminum in the range of from 5 to 100 mas.% silicon in the range of from 0 to 95 mas.%.;31. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 35 to 100 mas.% and u043au0440u0435u043cu043du0438u00a0 ranged from 0 to 65 mas.%.;32. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 40 to 90 mas.% and u043au0440u0435u043cu043du0438u00a0 ranging from 10 to 60 mas.%.;33. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 50 to 80 mas.% and u043au0440u0435u043cu043du0438u00a0 ranging from 20 to 50 mas.%.;34. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30, in which the content of u0430u043bu044eu043cu0438u043du0438u00a0 u043du0430u0445u043eu0434u0438u0442u0441u00a0 ranging from 60 to 70 mas.% and u043au0440u0435u043cu043du0438u00a0 ranging from 30 to 40 mas.%.;35. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30 in which aluminum and silicon selected from their mixtures or alloys thereof.;36. the target u0434u043bu00a0 plasma u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 on p.30 in which target additionally contains at least one u043fu0440u0438u0441u0430u0434u043au0443 selected from chromium, u0433u0430u0444u043du0438u00a0, u0438u0442u0442u0440u0438u00a0, u043du0438u043au0435u043bu00a0, bora, s u043eu0441u0444u043eu0440u0430, titanium, tantalum, u0446u0438u0440u043au043eu043du0438u00a0, u043du0438u043eu0431u0438u00a0 and their mixtures or combinations.