Flash - memory cell, arrangement of the flash - memory cells and method for the production of the flash - memory cells

摘要

Memory cells, formed as trench transistors, having a respective floating gate electrode and a control gate electrode at a trench wall above a channel region between doped regions for source and drain are provided with a gate electrode arranged in a further trench, via which gate electrode the channel region present in a semiconductor ridge between the trenches can additionally be driven.