A 58nm gate length 512Mb B4-Flash memory - Verification of excellent scalability of B4-Flash memory -

摘要

This paper describes a 58nm gate length 512Mb B4-Flash (Back Bias assisted Band-to-Band tunneling induced Hot Electron injection Flash) memory, which is the smallest gate length NOR until now. 58nm gate length cells have been fabricated by 90nm process utilizing gate slimming technique. 58nm B4-Flash cells have been confirmed its sufficient performance compared to those of 90nm B4-Flash cells for NOR operation. B4-HE programming scheme, in which the voltage between drain and source sets to 1.8V, allows more aggressive gate length scaling than that for conventional CHE programming NOR, consequently gate length has been successfully scaled down to 58nm.