Novel ternary semiconductor alloys with band gaps smaller than 0,8 ev

摘要

Ternary semiconductor alloys are described and those containing thermoelectric generators and peltier - arrangements as well as a method for the preparation of the ternary semiconductor alloys. The ternary semiconductor alloys have band gaps smaller than 0,8 ev, wherein the ternary semiconductor alloy of two binary parent compounds is derived and an element of the ternary semiconductor alloy in the two binary parent compounds is contained.