Lithographic method for manufacture of resist pattern having line roughness involves unstructured exposure of resist to light e.g. floodlight of mercury vapor lamp and heating it so that its line roughness is reduced

摘要

The method involves unstructured exposure of resist pattern (1), which has line roughness, to light whose wavelength lies between 150 and 300 nm. The resist is heated on a hot plate at a temperature between 90[deg]C and 130[deg]C for 30 to 150 seconds so that its line roughness (2) is reduced. In particular, floodlight of mercury vapor lamp is used for exposure. The temperature does not exceed the glass transition temperature of the resist. The resist pattern consists of resist materials having at least one polymer or copolymer with at least an acid-unstable group.