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Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing
Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing
Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer, forming an electrically insulating structure on exposed regions of the first electrically insulating layer, forming a trench in the hard mask so that a part of the surface of the semiconductor layer is exposed, thinning the semiconductor layer on an exposed part of the surface, forming a second electrically insulating layer on an exposed region of the semiconductor layer and forming electrically conducting material on the second electrically insulating layer. An independent claim is also included for: a layer arrangement produced using the above process.
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