Aberration avoiding mask layout producing method for mask, involves arranging optically not resolvable auxiliary structure adjacent to section in one direction that is different and runs transverse to other direction

摘要

The method involves converting a provisional auxiliary mask layout into a final mask layout by using an optical proximity correction (OPC) method. Main structures of the auxiliary mask layout are arranged in area of a section in a direction and are associated to an optically not resolvable auxiliary structure (140) that is arranged adjacent to the section in other different direction that runs transverse to the former direction.