Electrostatic discharge protection method for semiconductor circuit, involves arranging contact hole and metal layer exhibiting high heat conductivity compared to materials of circuit, in electrostatic discharge protection device

摘要

The method involves discharging an over voltage adjoining a semiconductor circuit, over a discharge path by an electrostatic discharge (ESD) protection device (1). A contact hole (8) and a metal layer (9) are arranged in the device for heat conduction, and have a heat conductivity higher than the average heat conductivity of the materials of the circuit. The hole and the metal layer are arranged close to hotspots of the device. An independent claim is also included for a semiconductor circuit comprising an ESD protection device.